Iii-v nanowire photovoltaics review of design for high efficiency

What are free-standing nanowires based on III-V compound semiconductors?

Free-standing nanowires based on III-V compound semiconductors have attracted considerable research interests in recent years due to their potential applications to novel nanophotonic devices, such as nano-lasers , photo-detectors [ 21, 22, 23 ], and efficient nanowire array solar cells .

Can nitride III-V nanowires be synthesised by bottom-up synthesis?

This paper deals with dilute nitride III-V (III-N-V) semiconductor nanowires and their synthesis by bottom-up (so-called self-assembly) methods for application to novel and high efficiency intermediate-band solar cells (IBSCs).

Can MOVPE technology grow III-N-V nanowires?

Limited studies exist however, for the growth of III-N-V nanowires by MOVPE technology. For both technologies much remains to be done however, to obtain device-quality nanowires, while in-situ doping of III-N-V alloys within the nanowires remains largely unexplored.

How does vapor composition affect axially-modulated nanowire heterostructures?

Changing of the vapor composition/doping during the VLS process allows for the growth of axially-modulated nanowire heterostructures; in particular, tunable and high doping levels is demonstrated for III-V nanowires grown by the method .

Are nanowire IBSCs based on dilute nitride III-V?

The fabrication of nanowire IBSCs based on dilute nitride III-Vs, such as the core-multishell structures proposed in Fig. 6, depends critically on the ability of MBE and MOVPE technologies to precisely self-assemble them.

Which self-assembly methods are used for synthesis of III-V nanowire heterostructures?

Three major self-assembly methods are currently employed for the synthesis of III-V nanowire heterostructures: (i) metal-catalyst assisted growth, (ii) self-catalyzed growth and (iii) selective-area epitaxy (SAE).